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P-type ZnO thin films achieved by ion implantation through dynamic annealing process
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10.1063/1.4751467
/content/aip/journal/apl/101/11/10.1063/1.4751467
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751467

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of ZnO (0002) peak of as-deposited ZnO films and films implanted to a fluence of (a) , (b) , and (c) . Solid line indicates location of (0002) peak for the as-deposited ZnO samples prior to implantation.

Image of FIG. 2.
FIG. 2.

Electrical properties of (a) p-type samples implanted at (square) and (triangle) and (b) carrier concentration of n-type samples implanted at (diamond) and (square). Closed symbols represent n-type samples and open symbols represent p-type samples.

Image of FIG. 3.
FIG. 3.

(a) ZnO film implanted at with a fluence of , (b) HRTEM of sample showing high density stacking faults, (c) ZnO film implanted at with a fluence of and (d) HRTEM of sample showing high density defect clusters.

Tables

Generic image for table
Table I.

Electrical results of ZnO films implanted at various temperatures and fluences.

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/content/aip/journal/apl/101/11/10.1063/1.4751467
2012-09-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751467
10.1063/1.4751467
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