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XRD patterns of ZnO (0002) peak of as-deposited ZnO films and films implanted to a fluence of (a) , (b) , and (c) . Solid line indicates location of (0002) peak for the as-deposited ZnO samples prior to implantation.
Electrical properties of (a) p-type samples implanted at (square) and (triangle) and (b) carrier concentration of n-type samples implanted at (diamond) and (square). Closed symbols represent n-type samples and open symbols represent p-type samples.
(a) ZnO film implanted at with a fluence of , (b) HRTEM of sample showing high density stacking faults, (c) ZnO film implanted at with a fluence of and (d) HRTEM of sample showing high density defect clusters.
Electrical results of ZnO films implanted at various temperatures and fluences.
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