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Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
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10.1063/1.4751845
/content/aip/journal/apl/101/11/10.1063/1.4751845
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751845
/content/aip/journal/apl/101/11/10.1063/1.4751845
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/content/aip/journal/apl/101/11/10.1063/1.4751845
2012-09-14
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751845
10.1063/1.4751845
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