1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
Rent:
Rent this article for
USD
10.1063/1.4751845
/content/aip/journal/apl/101/11/10.1063/1.4751845
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751845
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SRP and SIMS profiles of the Ge substrate received P implantation with the dose of 1.8 × 1015 cm−2 and SRP profiles of Ge substrate received P implantation with the dose of 6.0 × 1014 cm−2.

Image of FIG. 2.
FIG. 2.

(a) Variation of sheet resistance of Ge with increasing implantation doses for single implantation and MIMA, (b) normalized Raman intensity change with increasing implantation doses for single implantation and MIMA.

Image of FIG. 3.
FIG. 3.

(a) SRP profiles of Ge substrate with increasing a P MIMA cycle, (b) SIMS profile of Ge substrates received 1.8 × 1015 P/cm2 implantation and comparison of SRP profiles between single implantation and MIMA.

Loading

Article metrics loading...

/content/aip/journal/apl/101/11/10.1063/1.4751845
2012-09-14
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751845
10.1063/1.4751845
SEARCH_EXPAND_ITEM