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Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
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10.1063/1.4751849
/content/aip/journal/apl/101/11/10.1063/1.4751849
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751849
/content/aip/journal/apl/101/11/10.1063/1.4751849
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/content/aip/journal/apl/101/11/10.1063/1.4751849
2012-09-12
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751849
10.1063/1.4751849
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