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Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
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10.1063/1.4751849
/content/aip/journal/apl/101/11/10.1063/1.4751849
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751849

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of the a-IGZO TFTs. (b) Optical image of fabricated TFT with channel width of 2000 μm and channel length of 10 μm. (c) Schematic setup of the capacitance-voltage measurements.

Image of FIG. 2.
FIG. 2.

Evolution of the a-IGZO TFT characteristics under negative gate bias stress (NBS) applied at 60 °C with VGS(stress) = −30 V in dark.

Image of FIG. 3.
FIG. 3.

Evolution of the a-IGZO TFT characteristics under negative NBIS. (a) IDS-VGS for VGS(stress) = −10 V. (b) IDS-VGS for VGS(stress) = −30 V. (c) CG-VGS for VGS(stress) = −10 V. (d) Measured CG-VGS for VGS(stress) = −30 V. (e) Extracted surface potential values for VGS(stress) = −10 V. (f) Extracted surface potential values for VGS(stress) = −30 V.

Image of FIG. 4.
FIG. 4.

Evolution of the (a) subthreshold voltage shift (VTH) and (b) subthreshold swing as functions of NBIS time. VTH is taken as the gate voltage corresponding to a drain current of 10 pA.

Image of FIG. 5.
FIG. 5.

Evolution of the (a) flat band Fermi level (EF) relative to the conduction band (EC) and (b) field-effect mobility (μ FE) as functions of stress time.

Image of FIG. 6.
FIG. 6.

Evolution of the (a) interface charge trap density (Nint) and (b) gap trap density per unit energy (dNgap/dE) as functions of stress time.

Tables

Generic image for table
Table I.

Extracted TFT parameters for two NBIS conditions: VGS = −10 V and −30 V under white light at room temperature. All quantities are defined in the text and detailed explanations of their derivations are presented in Ref. 8.

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/content/aip/journal/apl/101/11/10.1063/1.4751849
2012-09-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4751849
10.1063/1.4751849
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