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Comparative study of solution-processed carbon nanotube network transistors
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10.1063/1.4752006
/content/aip/journal/apl/101/11/10.1063/1.4752006
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752006
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Figures

Image of FIG. 1.
FIG. 1.

(a) Resulting AFM images (2.5 μm × 2.5 μm, z-scale is 10 nm) of the networks created from the random deposition method using the 99% semiconducting nanotube solution under the different conditions of 3 min and 7 min. Scale bar, 1 μm. (b) Transfer characteristics (ID-VG) for each conditions of 3 min and 7 min at VD = 0.5 V. The subthreshold swing value is inserted in the graph (unit: V/dec). (c) Histograms compiled from the transfer characteristics showing on/off ratios.

Image of FIG. 2.
FIG. 2.

(a) Resulting AFM images (2.5 μm × 2.5 μm, z-scale is 10 nm) of the networks created from the random deposition method using the 90% semiconducting nanotube solution under the different conditions of 1 min and 3 min. Scale bar, 1 μm. (b) Transfer characteristics (ID-VG) for each conditions of 1 min and 3 min at VD = 0.5 V. The subthreshold swing value is inserted in the graph (unit: V/dec). (c) Histograms compiled from the transfer characteristics showing on/off ratios.

Image of FIG. 3.
FIG. 3.

(a) Resulting AFM images (2.5 μm × 2.5 μm, z-scale is 10 nm) of the networks created from the spin-aligned deposition method using the 90% semiconducting nanotube solution under the different spin speeds of 3000 rpm and 7000 rpm. Scale bar, 1 μm. Because the spin-aligned method results in the radial alignment from the center of the substrate, only upper parts of the chip showing the same direction of the alignment were used for the fabrication of the chip. (b) Transfer characteristics (ID-VG) for each conditions of 3000 rpm and 7000 rpm at VD = 0.5 V. The subthreshold swing value is inserted in the graph (unit: V/dec). (c) Histograms compiled from the transfer characteristics showing on/off ratios. (d) Output characteristics (ID-VD) of the devices from the spin-aligned method (7000 rpm) for different gate voltages ranging from −10 V to 1 V in 1 V steps.

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/content/aip/journal/apl/101/11/10.1063/1.4752006
2012-09-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of solution-processed carbon nanotube network transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752006
10.1063/1.4752006
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