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(a) Top-view image and cross-section schematic of the IGZO diodes' topology. The dashed line indicates the region of the cross-section and the square is the patterned IGZO. Typical IV characteristics of the diodes at RT for Pd, Pt, and Au bottom contacts (b) without electrode treatment prior to IGZO deposition and (c) after 1 h annealing step in air at 150 °C. IV characteristics of diodes with UV-ozone treated bottom electrodes prior to IGZO deposition are shown in (d). The oxygen content in the chamber during IGZO deposition is indicated in the legend. The area of all diodes is 50 × 70 μm2.
(a) The XPS spectrum of the untreated and UV-ozone treated Pd samples. The Pd 3d doublet is shown with its respective Pd and PdO fit. (b) TEM image of the IGZO diode reveals an interface layer between Pd and IGZO which can be attributed to be a PdO layer.
(a) IV characteristics of the Pd Schottky diode as-deposited and after annealing in air at 150 °C. (b) The CV characteristics of the diodes. The area of the diodes was 100 × 100 μm2.
(a) Forward current experimental data (symbols) and fit with a thermionic emission model with the parameters from Table I (full lines), and (b) the band diagram schematic for the as-deposited (closed red circle) and the two hours annealed diodes (open green circle).
(a) IVT measurements on a Pd Schottky diode with its respective Richardson plot (b). Wide bias curve showing the diode's typical reverse breakdown voltage (c).
Characteristics of the Schottky diodes from IV and CV measurements at RT [ideality factor (n), barrier height from I-V (ΦB, IV), series resistance (Rs), free charge density (Ne), built-in potential (Φbi, CV), barrier height from C-V (ΦB, CV), charge density in the depletion region (Ndepl), ratio of ionized atoms to free charges densities (), and depletion region thickness at 0 V bias (W)].
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