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Temperature dependence of chemical-vapor deposition of pure boron layers from diborane
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10.1063/1.4752109
/content/aip/journal/apl/101/11/10.1063/1.4752109
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752109

Figures

Image of FIG. 1.
FIG. 1.

Some of the possible secondary reactions when a Si surface is exposed to B2H6.

Image of FIG. 2.
FIG. 2.

Deposition rate of PureB layers on B-covered Si as a function of temperature for different diborane partial pressures (Phigh = 3.39 mTorr, Plow = 1.7 mTorr) and a carrier gas of either H2 or N2. The values are an average of 21 measurements taken over each wafer. The extracted activation energies in the linear regions are indicated.

Image of FIG. 3.
FIG. 3.

Measured sheet resistance at different deposition temperatures for the diborane partial pressure, Phigh = 3.39 mTorr.

Tables

Generic image for table
Table I.

Possible heterogeneous reactions involved in PureB-layer deposition with a B2H6 precursor.

Generic image for table
Table II.

PureB-layer roughness extracted from ellipsometry measurements, for a layer deposited in H2 onto a smooth PureB-layer pre-deposited at 700 °C. This first layer has a roughness < 0.2 nm.

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/content/aip/journal/apl/101/11/10.1063/1.4752109
2012-09-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of chemical-vapor deposition of pure boron layers from diborane
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752109
10.1063/1.4752109
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