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Some of the possible secondary reactions when a Si surface is exposed to B2H6.
Deposition rate of PureB layers on B-covered Si as a function of temperature for different diborane partial pressures (Phigh = 3.39 mTorr, Plow = 1.7 mTorr) and a carrier gas of either H2 or N2. The values are an average of 21 measurements taken over each wafer. The extracted activation energies in the linear regions are indicated.
Measured sheet resistance at different deposition temperatures for the diborane partial pressure, Phigh = 3.39 mTorr.
Possible heterogeneous reactions involved in PureB-layer deposition with a B2H6 precursor.
PureB-layer roughness extracted from ellipsometry measurements, for a layer deposited in H2 onto a smooth PureB-layer pre-deposited at 700 °C. This first layer has a roughness < 0.2 nm.
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