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Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
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10.1063/1.4752115
/content/aip/journal/apl/101/11/10.1063/1.4752115
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752115

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of a p-channel TFET layer structure. 5 nm In0.7Ga0.3As/450 nm GaAs0.35Sb0.65 was used for the measurement of binding energy information at the heterointerface, while 200 nm In0.7Ga0.3As/450 nm GaAs0.35Sb0.65 and 450 nm GaAs0.35Sb0.65 without the top In0.7Ga0.3As layer were used to measure the binding energy information of bulk In0.7Ga0.3As and GaAs0.35Sb0.65, respectively.

Image of FIG. 2.
FIG. 2.

Symmetric (004) and asymmetric (115) RSMs of the p-channel TFET structure with the projection of incident x-ray beam along [110] direction. Only 10% strain relaxation values in In0.7Ga0.3As and GaAs0.35Sb0.65 layers were extracted from RSMs, indicating low defect density in this region.

Image of FIG. 3.
FIG. 3.

(a) Dynamic SIMS depth profiles of Ga, In, As, and Sb of the TFET structure. An abrupt In0.7Ga0.3As/GaAs0.35Sb0.65 interface with a transition between In0.7Ga0.3As/GaAs0.35Sb0.65 of less than 10 nm was confirmed, indicating low level of As and Sb intermixing at the interface; (b) doping concentration profiles of Si in the n+ source and C in the p+ drain region. An abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 interface suggests a formation of steep junction.

Image of FIG. 4.
FIG. 4.

XPS spectra of (a) In3d5/2 CL and (b) valence band (VB) from 200 nm In0.7Ga0.3As/150 nm GaAs0.35Sb0.65 sample; (c) Sb3d5/2 CL and (d) VB from 150 nm GaAs0.35Sb0.65 without the top In0.7Ga0.3As layer; (e) Sb3d5/2 CL and (f) In3d5/2 CL from 5 nm In0.7Ga0.3As/150 nm GaAs0.35Sb0.65 measured at the interface. CL spectra curves were fitted using a Lorentzian convolution with a Shirley-type background. VBM were determined by linear extrapolation of the leading edge of VB spectra to the base line.

Image of FIG. 5.
FIG. 5.

Schematic energy-band diagram of the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface of a p-channel TFET structure. A type-II staggered band lineup with an effective barrier height of 0.13 eV was determined at the heterointerface.

Tables

Generic image for table
Table I.

XPS core level spectra results after curve fitting and VBM positions obtained by linear extrapolation of the leading edge to the extended base line of the valence band spectra.

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/content/aip/journal/apl/101/11/10.1063/1.4752115
2012-09-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752115
10.1063/1.4752115
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