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Magnetic field dependence of the spin relaxation length in spin light-emitting diodes
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10.1063/1.4752162
/content/aip/journal/apl/101/11/10.1063/1.4752162
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752162
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic sample structure for samples (a) (right) to (e) (left). The drawings are to scale from the QD layer upwards and show the varying transport length.

Image of FIG. 2.
FIG. 2.

Hysteresis curve obtained from sample (a) at room temperature and emission spectrum of the LED in the inset. The hysteresis curve was measured at the ground state emission energy of 0.98 eV.

Image of FIG. 3.
FIG. 3.

Circular polarization measured for samples (a) to (e) (black circles) and fitted exponential decay (red line) for various magnetic field strengths. It is clearly seen that the exponential decay fit flattens with increasing magnetic field strength.

Image of FIG. 4.
FIG. 4.

Background polarization (red dots) values from the exponential decay fits and measured magneto-optical dichroism (blue triangles) as a function of magnetic field strength.

Image of FIG. 5.
FIG. 5.

Experimentally obtained spin relaxation lengths at room temperature as a function of magnetic field parallel to the spin injection contacts’ magnetization (blue circles) and relative values of the spin relaxation time in bulk GaAs (red triangles, in arbitrary units, see Ref. 21 ).

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/content/aip/journal/apl/101/11/10.1063/1.4752162
2012-09-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic field dependence of the spin relaxation length in spin light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752162
10.1063/1.4752162
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