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The light intensity-dependent (a) photoconductive gain and (b) normalized gain for the CVD and MBE-grown GaN NWs. The data points taken from the MBE-GaN NWs in Ref. 2 are also plotted for comparison. The parameters of the individual GaN NW devices for the photoconductivity measurements are listed in Table I. The red dashed lines in Fig. 1(b) are the guiding lines by eyes to present the trends of the normalized gain versus intensity for the CVD and MBE-NWs.
The temperature-dependent photocurrent decay measurement for (a) the CVD-GaN NW (d = 60 nm) and (b) the MBE-GaN NWs (d = 110 nm). (c) The Arrhenius plots for the fitted decay time versus temperature curves for the CVD and MBE-GaN NWs. The red dashed lines are the fitting curves to the data points.
The parameters including NW diameter (d), interdistance between two contact electrodes (l), and applied voltage (V), of the individual GaN NW devices for the photoconductivity measurements. The parameters of the MBE-GaN NWs taken from Ref. 2 are also listed.
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