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Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study
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10.1063/1.4752230
/content/aip/journal/apl/101/11/10.1063/1.4752230
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752230

Figures

Image of FIG. 1.
FIG. 1.

The light intensity-dependent (a) photoconductive gain and (b) normalized gain for the CVD and MBE-grown GaN NWs. The data points taken from the MBE-GaN NWs in Ref. 2 are also plotted for comparison. The parameters of the individual GaN NW devices for the photoconductivity measurements are listed in Table I. The red dashed lines in Fig. 1(b) are the guiding lines by eyes to present the trends of the normalized gain versus intensity for the CVD and MBE-NWs.

Image of FIG. 2.
FIG. 2.

The temperature-dependent photocurrent decay measurement for (a) the CVD-GaN NW (d = 60 nm) and (b) the MBE-GaN NWs (d = 110 nm). (c) The Arrhenius plots for the fitted decay time versus temperature curves for the CVD and MBE-GaN NWs. The red dashed lines are the fitting curves to the data points.

Tables

Generic image for table
Table I.

The parameters including NW diameter (d), interdistance between two contact electrodes (l), and applied voltage (V), of the individual GaN NW devices for the photoconductivity measurements. The parameters of the MBE-GaN NWs taken from Ref. 2 are also listed.

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/content/aip/journal/apl/101/11/10.1063/1.4752230
2012-09-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752230
10.1063/1.4752230
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