1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.4752232
/content/aip/journal/apl/101/11/10.1063/1.4752232
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752232
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the AlGaN/AlN/GaN HFET with the side-Ohmic contacts.

Image of FIG. 2.
FIG. 2.

Temperature-dependent Hall measurements for the AlGaN/AlN/GaN heterostructure material.

Image of FIG. 3.
FIG. 3.

The measured C-V curves at room temperature for samples 1–4 (a) and samples 5–8 (b).

Image of FIG. 4.
FIG. 4.

The calculated 2DEG electron density n2D under different gate biases at room temperature for samples 1–4 (a) and samples 5–8 (b).

Image of FIG. 5.
FIG. 5.

The measured I–V curves at room temperature for samples 1–4 (a) and samples 5–8 (b).

Image of FIG. 6.
FIG. 6.

The relationship between the 2DEG electron mobility and the applied gate bias at room temperature for samples 1–4 (a) and samples 5–8 (b) with the side-Ohmic contacts, and the samples 1–4 (c) and samples 5–8 (d) with the normal-Ohmic contacts (Ref. 3) in the AlGaN/AlN/GaN heterostructures.

Image of FIG. 7.
FIG. 7.

The SEM-EDS composition map in the area around 1 μm apart from the Ohmic contact for one of our AlGaN/AlN/GaN HFETs with the side-Ohmic contacts (spectrum 1) and one of the devices with the normal-Ohmic contacts in Ref. 3 (spectrum 2).

Loading

Article metrics loading...

/content/aip/journal/apl/101/11/10.1063/1.4752232
2012-09-10
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752232
10.1063/1.4752232
SEARCH_EXPAND_ITEM