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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
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10.1063/1.4752232
/content/aip/journal/apl/101/11/10.1063/1.4752232
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752232
/content/aip/journal/apl/101/11/10.1063/1.4752232
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/content/aip/journal/apl/101/11/10.1063/1.4752232
2012-09-10
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752232
10.1063/1.4752232
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