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Schematic sample structure and fabrication process by NBE and H-MBE regrowth ((a) first MBE growth, (b) arrangement of ferritin molecules, (c) NBE and removal of iron oxide cores, and (d) H-MBE regrowth).
AFM images (a) before and after the regrowth ((b) ND sample A, (c) ND sample B and (d) sample C), respectively.
PL spectra of the samples (a) before and after the regrowth at 19 K ((b) ND sample A, (c) ND sample B, and (d) sample C), and (e) reference sample which has 8 and 4 nm-thick GaAs QWs, respectively. The right-hand insets are schematic PL sample structures.
Spectral separation for the spectra observed at excitation power of (a) 100 and (b) 20 mW. (c) Peak intensity ratio of S2 with respect to S1 as a function of excitation power. Below 20 mW, no S2 component was observed and fitted by only S1.
Conditions of the Al composition x, thickness of AlGaAs capping layer at the first step and etching depth (nano-pillar height) of ND sample A, ND sample B and sample C.
Parameters used in the calculation and transition energy of the circular cylinder for the height of 8 and 4 nm.
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