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Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth
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10.1063/1.4752233
/content/aip/journal/apl/101/11/10.1063/1.4752233
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752233

Figures

Image of FIG. 1.
FIG. 1.

Schematic sample structure and fabrication process by NBE and H-MBE regrowth ((a) first MBE growth, (b) arrangement of ferritin molecules, (c) NBE and removal of iron oxide cores, and (d) H-MBE regrowth).

Image of FIG. 2.
FIG. 2.

AFM images (a) before and after the regrowth ((b) ND sample A, (c) ND sample B and (d) sample C), respectively.

Image of FIG. 3.
FIG. 3.

PL spectra of the samples (a) before and after the regrowth at 19 K ((b) ND sample A, (c) ND sample B, and (d) sample C), and (e) reference sample which has 8 and 4 nm-thick GaAs QWs, respectively. The right-hand insets are schematic PL sample structures.

Image of FIG. 4.
FIG. 4.

Spectral separation for the spectra observed at excitation power of (a) 100 and (b) 20 mW. (c) Peak intensity ratio of S2 with respect to S1 as a function of excitation power. Below 20 mW, no S2 component was observed and fitted by only S1.

Tables

Generic image for table
Table I.

Conditions of the Al composition x, thickness of AlGaAs capping layer at the first step and etching depth (nano-pillar height) of ND sample A, ND sample B and sample C.

Generic image for table
Table II.

Parameters used in the calculation and transition energy of the circular cylinder for the height of 8 and 4 nm.

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/content/aip/journal/apl/101/11/10.1063/1.4752233
2012-09-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752233
10.1063/1.4752233
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