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Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films
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See supplementary material at http://dx.doi.org/10.1063/1.4752434
for additional details regarding fabrication of the U3
photodiode structures, for the determination of frontier energy levels with cyclic voltammetry, for fitting J-V characteristics to an ideal diode equation, and for measurements of absorption and internal quantum efficiency. [Supplementary Material]
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We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined with the use of a reflective anode and optical spacer layer, results in a zero-bias external quantum efficiency of 16.1 ± 0.1% (λ = 756 nm) for a device containing an 8.1 ± 0.3 nm-thick U3 film. The specific detectivity (D*) and response speed (f 3 dB ) of a fully optimized device are measured to be (4.3 ± 0.1) × 1011 cm Hz1/2 W−1 and 92 kHz, respectively.
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