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Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions
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10.1063/1.4752437
/content/aip/journal/apl/101/11/10.1063/1.4752437
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752437
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Figures

Image of FIG. 1.
FIG. 1.

The intrinsic contact thermal resistance for (a) h-BN, (b) G, and (c) SiC in the (0001) direction. Vertical dashed lines mark the R values at room temperature.

Image of FIG. 2.
FIG. 2.

The interfacial thermal resistance for (a) G/h-BN, (b) G/SiC, and (c) G/H:SiC. Vertical dashed lines mark the values at room temperature.

Image of FIG. 3.
FIG. 3.

Left panel: total transmittance for (a) G/h-BN, (b) G/SiC, and (c) G/H:SiC. Right panel: sketch of the atomic displacement patterns of the relevant normal modes that are mainly responsible for the phonon transmission at the interface. The corresponding energies of modes (d), (e), and (f) are indicated by arrows in panels (a), (b), and (c), respectively.

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/content/aip/journal/apl/101/11/10.1063/1.4752437
2012-09-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752437
10.1063/1.4752437
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