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Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon
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10.1063/1.4752454
/content/aip/journal/apl/101/11/10.1063/1.4752454
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752454
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized EBSD IQ value versus the thickness of an amorphous layer on top of a monocrystalline silicon substrate. The value 1 corresponds to white pixels within the IQ maps, meaning the measured spot to be crystalline; 0 values are black pixels within the IQ maps, meaning the measured spot to consist of an amorphous layer thicker than the probing depth .

Image of FIG. 2.
FIG. 2.

Single fs-laser pulse lines with a step pitch of (a) and (b) . Top row: SEM images; bottom row: EBSD IQ maps. Dashed rings mark interface boundary area of the ablation and recrystallization threshold (inner ring) and the modification threshold (outer ring) which both form a low contrast within the EBSD IQ map, meaning this areas to be amorphous with a thickness less than (inset in the IQ map of (b): OIM map indicating red areas to be (100) oriented and amorphous material to be thinner than the probing depth).

Image of FIG. 3.
FIG. 3.

EBSD maps of a monocrystalline silicon sample after an area scan with fs-laser pulses (same overlap as in Fig. 2(b)). (a) IQ map of the non-annealed sample. (b) IQ map of the same sample after annealing at for . Insets: OIM maps indicating red areas to be (100) oriented.

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/content/aip/journal/apl/101/11/10.1063/1.4752454
2012-09-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/11/10.1063/1.4752454
10.1063/1.4752454
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