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Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) and (b) Combined in situ XRD (a) and Rs (b) measurements on Ni(6%Pd)/Si(100) sample. The reaction is decomposed in four stages labelled from 1 to 4. (c) and (d) Treatment of the XRD and Rs data. (c) Variation of the normalized integrated intensity of the Ni(Pd), δ-Ni2Si, θ-Ni2Si, and (Ni1−xPdx)Si XRD peaks as a function of the temperature; the relative variation of the simultaneously recorded Rs is plotted on the same graph (pink). (d) Relative variation of Ni d-spacing and Ni2Si perpendicular strain as a function of the temperature.

Image of FIG. 2.
FIG. 2.

Measured and calculated Rs (Eq. (3) ) between 270 °C and 480 °C. The calculations were made with 3 different hypothesis for NiSi thickness between [270 °C–310 °C]: constant thickness (red), linear variation (blue), and no NiSi layer (green).

Image of FIG. 3.
FIG. 3.

Schematic summary of the proposed model for the solid phase reaction of Ni(6%Pd)/Si(100), described according to the 4 stages of Fig. 1 . The temperature increases from stage 1 up to stage 4; the temperature axis and layer thicknesses are not to scale.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature