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(a) Representative x-ray reflectivity spectra for as-deposited and 450 °C-annealed 2.5Z1T ZTO on thermal oxide/Si substrate. Here, film thickness is ∼30 nm and the growth temperature is 170 °C. No significant change was observed after the annealing. The density was ∼5.3 g/cm3 and RMS roughness was ∼0.8 nm. (b) RBS spectrum for as-deposited 2.5Z1T on a carbon substrate. The Zn/Sn ratio was estimated at 3.9.
(a) Glancing-angle x-ray diffraction of as-deposited and annealed 2.5Z1T ZTO films grown on thermal oxide/Si substrates (incidence angle: 0.4°). Crystallization occurred at 750 °C. (b) The crystallization (circles) and phase separation (squares) temperatures for ZTO layers with different compositions. Inset: An AFM image of a 550 °C-annealed 2.5Z1T ZTO film. No phase separation was observed for 1Z1T up to 650 °C. (c) EDX O, Zn, and Sn line profiles of the phase separated particle (inset image), which was analyzed as Zn-rich phase.
(a) Representative IDS-VDS output characteristics of a transistor with 450 °C-annealed 2.5Z1T ZTO channel (L: 70 μm, W: 1000 μm). An optical microscope image of the fabricated transistor is shown as an inset. (b) Log(IDS)-VGS transfer curve for the transistor. Inset is the enlargement for subthreshold swing determination at VDS of 20 V. Here, sweep is 50 mV step. Subthreshold swing was 0.27 V/decade.
(a) Field effect mobility for ZTO channels with various Zn/Sn ratios. Here, two different growth temperatures of 120 and 170 °C were compared. (b) Field effect mobility and subthreshold swing of transistors with 2.5Z1T channel as a function of annealing temperature.
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