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Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
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10.1063/1.4751356
/content/aip/journal/apl/101/12/10.1063/1.4751356
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4751356

Figures

Image of FIG. 1.
FIG. 1.

(a) Transfer characteristics of Si0.5Ge0.5n-TFETs with S/D implantations of 1 × 1015 BF2 +/cm2 [1 × 1015 (black), 1 × 1014 (red full circles), and 1 × 1013 As+/cm2 (blue empty squares), respectively]. Solid curves are for V ds = 0.5 V and dotted for V ds = 1.7 V. (b)-(e) The simulated band structure displayed in the insets indicates the influence for the drain dopant concentration on the tunneling current: (b) and (c) N A = N D = 2 × 1020 cm−3; (d) and (e) N A = 2 × 1020 cm−3, N D = 1 × 1019 cm−3. The bias conditions are (b) and (d) V ds = 0.1 V gs = −0.5 and (c) and (e) V ds = 0.1, V gs = −0.5.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of Si0.5Ge0.5p-TFETs with S/D implantations of 1 × 1015 As+/cm2 [1 × 1015 (solid and dotted black lines), 1 × 1014 (red full circles), and 1 × 1013 BF2 +/cm2 (blue empty circles), respectively]. Solid curves are for V ds = 0.5 V and dotted for V ds = 1.7 V.

Image of FIG. 3.
FIG. 3.

(a) Active dopant dose and (b) sheet resistance vs. ion implantation dose.

Tables

Generic image for table
Table I.

I n and I p values of Si0.5Ge0.5 TFETs at drain voltages of V ds = 0.5V and 1.7V and for different source to drain ion implantations ratio. The current values were averaged over 180 devices.

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/content/aip/journal/apl/101/12/10.1063/1.4751356
2012-09-17
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4751356
10.1063/1.4751356
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