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(a) 2D distribution of electron energy in the active area. (b) 2D distribution of the lattice temperature in the active area.
Comparison of the I(VDS) characteristics obtained for different substrates with an isothermal result. Results are shown for VGS = 0 V.
Comparison of the maximal lattice temperatures obtained with the physical-thermal model and experimental results: (1) IEMN measured results on silicon (Si exp1) and on SiC (SiC exp1) substrates. (2) Published results8 on SiC (SiC exp2) and on diamond (diamond exp2) substrates.
Evolution of the thermal resistance RTH versus dissipated power for the different substrates.
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