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Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
2. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nature Mater. 9, 721 (2010).
15. T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, M. Mizuguchi, A. A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami, Y. Ando, and T. Suzuki, Nat. Nanotechnol. 4, 158 (2009).
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The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.
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