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ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications
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10.1063/1.4753819
/content/aip/journal/apl/101/12/10.1063/1.4753819
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753819

Figures

Image of FIG. 1.
FIG. 1.

Simulated reflectance spectra for ZnTe/GaSb DBRs with different numbers of λ/4 pairs.

Image of FIG. 2.
FIG. 2.

Peak reflectance versus number of λ/4 pairs.

Image of FIG. 3.
FIG. 3.

Measured and simulated XRD patterns for a ZnTe/GaSb DBR sample of four λ/4 pairs.

Image of FIG. 4.
FIG. 4.

Measured and simulated reflectance spectra for a ZnTe/GaSb DBR sample of seven λ/4 pairs.

Tables

Generic image for table
Table I.

Comparison of different DBRs used for VCSELs emitting at 2.3 μm.

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/content/aip/journal/apl/101/12/10.1063/1.4753819
2012-09-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753819
10.1063/1.4753819
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