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Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
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10.1063/1.4753927
/content/aip/journal/apl/101/12/10.1063/1.4753927
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753927
/content/aip/journal/apl/101/12/10.1063/1.4753927
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/content/aip/journal/apl/101/12/10.1063/1.4753927
2012-09-18
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753927
10.1063/1.4753927
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