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Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
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10.1063/1.4753927
/content/aip/journal/apl/101/12/10.1063/1.4753927
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753927
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of air-gap C-V method and its ability to measure C-V characteristics during surface/interface formation process.

Image of FIG. 2.
FIG. 2.

(a) Air-gap C-V curves of InGaAs surfaces after 1-, 2-, 6-, 9-, and 17-cycle ALD Al2O3 processes. (b) Obtained Dit distribution in each ALD process cycle.

Image of FIG. 3.
FIG. 3.

XPS As 3d spectra for (a) as-received surface, (b) surface after 4-cycle ALD process, and (c) surface after 17-cycle ALD process. (d) Variations of ratio for As3+ and As5+ components.

Image of FIG. 4.
FIG. 4.

Conventional MIS C-V curves of InGaAs with 20-nm ALD-Al2O3 layer (a) before and (b) after PMA process. The measurement frequencies range from 500 Hz to 500 kHz. The dashed lines are the calculated ideal curves without interface traps.

Image of FIG. 5.
FIG. 5.

(a) XPS As 3d and (b) Al 2p spectra for surfaces after 4-cycle ALD-Al2O3 process with and without annealing.

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/content/aip/journal/apl/101/12/10.1063/1.4753927
2012-09-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753927
10.1063/1.4753927
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