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Propagation lengths along the horizontal (in-plane) and the vertical (normal) direction in the a-Si:H side of SPP modes at the a-Si:H/metal planar interface as a function of the wavelength in vacuum of the incident light. Only the cases of two metals are shown, molybdenum and silver. Gold behaves quite similarly to silver and it is not reported for clarity.
(a) Cross-sectional SEM micrograph of the a-Si:H cell stack, evidencing the bottom SnO2:F and top AZO TCO contacts (bottom and top reversed in the figure). (b) Cross-sectional TEM micrograph showing the ultra-thin Mo layer, of the order of a few nm of thickness, deposited on the SnO2:F film and then covered with a-Si:H.
Transmittance spectra recorded on the control AGC VU-type glass substrate and on a number of VU-type substrates covered with ultra-thin Mo layers under various sputtering conditions, from 100 W to 500 W plasma power levels and various deposition times, ranging from 8 to 20 s.
I-V characteristics under standard illumination conditions of the control samples without Mo and of devices with ultra-thin Mo films of increasing thickness (and decreasing optical transmittance as reported in Fig. 3), both in the case of high (a) and low temperature a-Si:H deposition (b). The inset (c) shows the ratio of the internal quantum efficiencies measured on the samples with and without Mo in the case of low temperature a-Si:H deposition for the sample with 100 W 20 s Mo deposition and the reference, both reported in (b).
Correlation plots between and (a), and between and (b). The normalization of , , and is done by dividing by the respective values measured on the reference samples without Mo.
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