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Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
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10.1063/1.4753947
/content/aip/journal/apl/101/12/10.1063/1.4753947
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753947

Figures

Image of FIG. 1.
FIG. 1.

(a) Resistivity of our sputtered W films as a function of thickness. The films are capped by CoFeB and the CoFeB conductance is subtracted. (b) X-ray diffraction patterns for sputtered W(8 nm) (upper blue trace line) and W(6 nm) (lower red trace line) films (without a CoFeB cap). The arrows indicate the identifications of the Bragg peaks and the corresponding diffraction planes.

Image of FIG. 2.
FIG. 2.

(a) Schematic illustration of the ST-FMR device and the circuit layout for measurements of the resonance linewidth versus DC current. (b) The change of the effective damping constant as a function of DC current charge density for two angles of applied magnetic field. The RF frequency f = 9 GHz. The solid lines represent fits to Eq. (1).

Image of FIG. 3.
FIG. 3.

(a) Schematic illustration of the β-W 3-terminal device and the measurement circuit layout. (b) Differential resistance (dV/dI) minor loop for the MTJ without any DC current along the β-W bottom channel. The measured resistance includes a 2 kΩ lead resistance from the W channel that is not subtracted here. The external magnetic field was applied along the long axis of the nano-pillar MTJ.

Image of FIG. 4.
FIG. 4.

(a) Differential resistance of the MTJ as a function of the DC bias current , exhibiting magnetization switching by the spin Hall torque. An in-plane external magnetic field was applied to cancel the dipole field from the fixed layer. (b) Switching currents as a function of the current ramp rate. The blue squares represent switching currents from the AP to P state, and the red triangles represent switching currents from P to AP. Solid lines are fits to a thermally assisted spin torque switching model.

Tables

Generic image for table
Table I.

The spin Hall angle of W as determined from the critical currents for magnetization switching in 3-terminal ST devices.

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/content/aip/journal/apl/101/12/10.1063/1.4753947
2012-09-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753947
10.1063/1.4753947
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