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Rashba spin-orbit-interaction-based quantum pump in graphene
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Image of FIG. 1.
FIG. 1.

Graphene-based pumping device. The monolayer graphene is sandwiched between two metallic contacts. An electrostatic top gate (region T) of length and a back gate (region SO) of length are placed between the two contacts, which leave two “normal” graphene regions and . Finite spin-orbit interactions are present in region SO, only. The top-part of the figure schematically shows the relevant kinematic angles for the scattering process. In the SO region, spin double refraction is observed, i.e., the two spin species move in different directions .

Image of FIG. 2.
FIG. 2.

Charge (left panels) and spin (right panels) pumping currents as a function of the injection angle for different lengths of the SOI region : (i) 50 nm (solid line), (ii) 75 nm (dashed line), (iii) 100 nm (dotted line). The others parameters are: meV, nm, meV, meV, meV (upper panels) and meV (lower panels), meV, and .

Image of FIG. 3.
FIG. 3.

Angle averaged charge (blue-solid line) and spin (red-dashed line) pumping currents as a function of the electrostatic gate voltage for different lengths of the SOI region: (a) and (d) 50 nm, (b) and (e) 75 nm, and (c) and (f) 100 nm. The integration region is for (a) and (d), for (b) and (e), and for (c) and (f). For the upper panels (a)–(c), ; for the lower ones (d)–(f), meV. The other parameters are common to all the panels: meV, nm, meV, meV, and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rashba spin-orbit-interaction-based quantum pump in graphene