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Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
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10.1063/1.4753993
/content/aip/journal/apl/101/12/10.1063/1.4753993
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753993
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Linear IV curves demonstrating ohmic contact for n- and p-type graded AlGaN layer. D1 is the IV curve for polarization induced n-type doping of a 10% graded AlxGa1−xN (x = 0.1) film; D2 is the IV curve for polarization induced p-type doping of a 10% graded AlxGa1−xN (x = 0.1) film. The RTP for n-type was at 800 °C for 30 s and 750 °C for 20 s for p-type.

Image of FIG. 2.
FIG. 2.

Schematic illustration of polarization-induced n- and p-type doping in graded AlGaN pn-junction. (a) Sample structure of graded AlGaN pn-junction on Ga-face template, (b) polarization charge field is created by grading AlGaN on GaN. The positive polarization charge field created by grading AlGaN attracts electrons to realize n-type doping and, as a result of attracting electrons, positive charges (i.e., holes) are supplied for the negative polarization charge field to realize p-type doping.

Image of FIG. 3.
FIG. 3.

Reciprocal space map of linear graded AlxGa1−xN (x = 0.1, 0.2, 0.3) on GaN template. The result showed only 10% grading AlGaN is coherent strain on GaN film.

Image of FIG. 4.
FIG. 4.

Current-Voltage measurement for (a) regular doped GaN pn junction, (b) graded Al0.1Ga0.9 N pn-junction, and (c) Schottky diode. The mesa is Si and Mg doped GaN pn junction in a device (a); the mesa is graded Al0.1Ga0.9 N pn-junction in device (b); the mesa is undoped GaN film in device (c).

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/content/aip/journal/apl/101/12/10.1063/1.4753993
2012-09-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4753993
10.1063/1.4753993
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