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Robust low resistivity p-type ZnO:Na films after ultraviolet illumination: The elimination of grain boundaries
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10.1063/1.4754003
/content/aip/journal/apl/101/12/10.1063/1.4754003
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754003
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Figures

Image of FIG. 1.
FIG. 1.

(a) Typical SEM top view of ZnO:Na films. (b) Typical XPS narrow scan of O2p electron, where the strong peak around 531.4 eV indicates a high level of oxygen adsorption.

Image of FIG. 2.
FIG. 2.

Time dependent Hall-effect measurements of a ZnO:Na0.005 film (a) after 20 s UV illumination, (b) after 40 s UV illumination. Time dependent Hall-effect measurements of ZnO:Na0.003 film (c) after 20 s UV illumination, (d) after 40 s UV illumination.

Image of FIG. 3.
FIG. 3.

Time dependent Hall-effect measurements of ZnO:Na0.005 film after 40 s UV illumination with oxygen gas flowing over the film.

Image of FIG. 4.
FIG. 4.

Time dependent Hall-effect measurements of (a) undoped ZnO and (b) ZnO:Na0.001 film after 40 s UV illumination.

Image of FIG. 5.
FIG. 5.

Schematic illustration of the formation of ZnO:Na films composed of numerous nanorods, where the holes accumulate at the grain boundaries as induced by the back-to-back Schottky barrier.

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/content/aip/journal/apl/101/12/10.1063/1.4754003
2012-09-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Robust low resistivity p-type ZnO:Na films after ultraviolet illumination: The elimination of grain boundaries
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754003
10.1063/1.4754003
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