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Growth study of nonpolar Zn1−x Mg x O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM images of thin films grown at under different metal fluxes: (a) , , (b) , , (c) , , (d) , . The root mean square surface roughness is indicated in the images.

Image of FIG. 2.
FIG. 2.

ERD Mg depth profiles of nonpolar thin films grown under various Zn and Mg fluxes. The dashed lines indicate the saturation value of the Mg concentration.

Image of FIG. 3.
FIG. 3.

(a) -scan of the thin film grown with (solid line) and with (dashed line, shifted for clarity). The broad peaks marked with an × originate from the Al sample holder. (b) Reciprocal space map of the reflex of the sample grown with . The dashed (dotted) line indicates the variation of the peak position for pseudomorphic (fully relaxed) growth.

Image of FIG. 4.
FIG. 4.

(a) Bright field and (b) weak beam dark field TEM image () sensitive to defects exhibiting a Burgers vector with an edge component. The point-like intensity fluctuations are ascribed to surface defects induced by the sample preparation.

Image of FIG. 5.
FIG. 5.

(a) Low-temperature PL spectra of thin films grown under various Mg fluxes (shifted for clarity). The effective Mg content x deduced from the PL peak position is also denoted. (b) Temperature dependence of the integrated PL intensity of the same samples and of a binary ZnO reference sample (normalized to 1 for T = 4.2 K). The dashed lines are the fitting curves assuming two non-radiative pathways (cf. Ref. 24).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth study of nonpolar Zn1−xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy