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W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
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10.1063/1.4754138
/content/aip/journal/apl/101/12/10.1063/1.4754138
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754138

Figures

Image of FIG. 1.
FIG. 1.

(a) Curves of sheet resistance vs. temperature for Wx(Sb2Te)1−x films; (b) Arrhenius plots of failure time vs. 1/kT for Wx(Sb2Te)1−x and GST films.

Image of FIG. 2.
FIG. 2.

(a) Crystallinity of Wx(Sb2Te)1−x, and GST films as a function of temperature; (b) Deviation of crystallinity of Wx(Sb2Te)1−x, and GST films with respect to annealing temperature.

Image of FIG. 3.
FIG. 3.

XRD patterns of Wx(Sb2Te)1−x films annealed at 250 °C for 2 min.

Image of FIG. 4.
FIG. 4.

TEM images of (a) W0.03(Sb2Te)0.97 and (c) W0.07(Sb2Te)0.93 films annealed at 250 °C for 2 min; (b) the corresponding SAED pattern of the marked crystal grain A in (a); (d) the corresponding SAED pattern of (c).

Image of FIG. 5.
FIG. 5.

SET and RESET characteristics of PCM devices based on (a) W0.07(Sb2Te)0.93 and (b) GST; (c) resistance-pulse characteristics of the W0.07(Sb2Te)0.93 based PCM cell; (d) endurance characteristics of the W0.07(Sb2Te)0.93 based PCM cell. Inset of (b) is the SEM picture of a cross section of the fabricated device.

Tables

Generic image for table
Table I.

Electrical resistivity, mobility, and carrier density of Sb2Te and W0.07(Sb2Te)0.93 films before and after crystallization.

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/content/aip/journal/apl/101/12/10.1063/1.4754138
2012-09-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754138
10.1063/1.4754138
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