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Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
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10.1063/1.4754141
/content/aip/journal/apl/101/12/10.1063/1.4754141
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754141

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra obtained at θ = 45° for Al2O3 (2 nm)/InAlN interface, (a) O 1s spectrum and (b) In 4d spectrum.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the conventional method used to measure ΔE V.

Image of FIG. 3.
FIG. 3.

VBM spectra observed for Al2O3 (2 nm)/InAlN interface at θ = 15° and θ = 75°.

Image of FIG. 4.
FIG. 4.

Measured (open circles and rectangles) and simulated (solid lines) binding energy and FWHM vs. θ for (a) O 1s from the 2-nm-thick Al2O3 layer and (b) In 4d from the host InAlN layer.

Image of FIG. 5.
FIG. 5.

Depth profiles for E V, O 1s, and In 4d levels assumed in the calculation used to reproduce the observed phenomena. Open circles, triangles, and rectangles indicate the calculated apparent binding energy positions at θ = 15°, 45°, and 75°, respectively.

Image of FIG. 6.
FIG. 6.

Measured (open circles) and calculated (solid line) results for apparent ΔE CL vs. θ.

Tables

Generic image for table
Table I.

Results of angle-resolved XPS to measure ΔE CL.

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/content/aip/journal/apl/101/12/10.1063/1.4754141
2012-09-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754141
10.1063/1.4754141
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