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XPS spectra obtained at θ = 45° for Al2O3 (2 nm)/InAlN interface, (a) O 1s spectrum and (b) In 4d spectrum.
Schematic diagram of the conventional method used to measure ΔE V.
VBM spectra observed for Al2O3 (2 nm)/InAlN interface at θ = 15° and θ = 75°.
Measured (open circles and rectangles) and simulated (solid lines) binding energy and FWHM vs. θ for (a) O 1s from the 2-nm-thick Al2O3 layer and (b) In 4d from the host InAlN layer.
Depth profiles for E V, O 1s, and In 4d levels assumed in the calculation used to reproduce the observed phenomena. Open circles, triangles, and rectangles indicate the calculated apparent binding energy positions at θ = 15°, 45°, and 75°, respectively.
Measured (open circles) and calculated (solid line) results for apparent ΔE CL vs. θ.
Results of angle-resolved XPS to measure ΔE CL.
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