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Erratum: “Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications” [Appl. Phys. Lett. 100, 233506 (2012)]
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1. A. Misra, M. Waikar, A. Gour, H. Kalita, M. Khare, M. Aslam, and A. Kottantharayil, Appl. Phys. Lett. 100, 233506 (2012).
http://dx.doi.org/10.1063/1.4726284
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2012-09-17
2014-04-18

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Scitation: Erratum: “Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications” [Appl. Phys. Lett. 100, 233506 (2012)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/12/10.1063/1.4754145
10.1063/1.4754145
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