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Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of poly-Si solar cell structure. (b) EPR sample structure and procedure to release poly-Si layer from substrate by wet-chemical etching (diluted HF). The poly-Si layer is supported by a scotch tape.

Image of FIG. 2.
FIG. 2.

Experimental (open symbols) and theoretical results (solid lines) of of poly-Si solar cells as a function of defect density in the poly-Si absorber bulk. Red (grey) symbols indicate samples on Corning 1737 or thermally oxidized Si wafers, and black symbols are samples deposited on SiN-coated BOROFLOAT glass. Solid lines show numerical device simulations of as a function of the density of neutral defects. and indicate capture cross-sections of defects used for simulations. The shaded area marks the area between the two simulations. The inset shows an EPR spectrum of a poly-Si absorber layer after SPC and lift-off from the SiN-coated glass substrate.

Image of FIG. 3.
FIG. 3.

Defect density in poly-Si as a function of grain size after SPC and SPC + HP (for symbol and color code see Fig. 2). Solid lines are model calculations of the defect density assuming defects at grain boundaries (with density ) and inside grains (with density ). Standard errors of fit parameters are given in brackets. The dashed line indicates the lower limit for the defect density () in case of infinite grain size.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells