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Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface
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10.1063/1.4751986
/content/aip/journal/apl/101/13/10.1063/1.4751986
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4751986
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Figures

Image of FIG. 1.
FIG. 1.

Top panel shows RHEED pattern and bottom panel shows FESEM images with corresponding FFT images as inset, where (a, a′), (b, b′), and (c, c′) correspond to GaN growth on clean Si(111), amorphous silicon nitride, and crystalline silicon nitride, respectively.

Image of FIG. 2.
FIG. 2.

(a) FFT image of Fig. 1(c)′, (b) shows the line intensity profile across image “a,” (c) is FFT image obtained after higher intensity thresholding of image “a,” that shows the intra-rod symmetry at higher length scales, (d) is the histogram of the measured nanorod sizes from Fig. 1(c)′, and shows sharp value at 160 nm, (e) shows the proposed model of nanorods and their superstructural arrangement.

Image of FIG. 3.
FIG. 3.

XRD 2θ scan and PL spectra as inset, for thin GaN films grown on (a) clean Si(111)-7 × 7 reconstructed surface, (b) amorphous SixNy surface, and (c) crystalline Si3N4 surface.

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/content/aip/journal/apl/101/13/10.1063/1.4751986
2012-09-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4751986
10.1063/1.4751986
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