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Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
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10.1063/1.4752456
/content/aip/journal/apl/101/13/10.1063/1.4752456
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4752456
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ID-VG transfer characteristic curves of TiN/HfO2 p-MOSFETs before and after PBS stress. The inset shows normalized CGB-VG curve before and after stress and corresponding energy band diagram for stress condition.

Image of FIG. 2.
FIG. 2.

The PBS-induced ICP and SS degradation for TiN/HfO2 p-MOSFETs. The inset shows the equation for partial voltage for SiO2 and initial SS value.

Image of FIG. 3.
FIG. 3.

The PBS-induced ICP and SS degradation for TiN/HfO2 p-MOSFETs were plotted as a function of AC stress frequency ranging of 0Hz, 1 kHz, 100 kHz, and 1 MHz. The inset shows the corresponding energy band diagram for AC and DC stress condition.

Image of FIG. 4.
FIG. 4.

IG-VG pulse characteristic curves of TiN/HfO2 p-MOSFETs. The inset shows the pulse configuration and IG-VG characteristic curves under DC measurement.

Image of FIG. 5.
FIG. 5.

The PBS-induced ICP and SS degradation for TiN/HfO2 p-MOSFETs with different SiO2/Si Nit under PBS (devices A and B). The inset shows the corresponding energy band diagram for device B under stress and the ICP curve versus VG before stress with measurement condition f = 5 MHz.

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/content/aip/journal/apl/101/13/10.1063/1.4752456
2012-09-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4752456
10.1063/1.4752456
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