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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
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Figures

Image of FIG. 1.

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FIG. 1.

(a) AFM image of uncapped QDs sample. (b) AFM height distribution for uncapped QDs sample. (c),(d) HRTEM bright field images of two isolated InGaN QDs with different height.

Image of FIG. 2.

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FIG. 2.

(a) PL spectra for uncapped (solid line) and capped (dash line) QDs samples under the temperature of 10 K, 215 K, and 300 K. (b) Measured temperature dependence of PL intensity and FWHM of PL spectrum for uncapped and capped QDs samples (solid square ◼ and triangle ▲ for uncapped QDs sample, hollow circle ◻ and triangle ▽ for capped QDs sample).

Image of FIG. 3.

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FIG. 3.

Scheme of conductive band diagram and carriers’ redistribution of InGaN QDs layer.

Image of FIG. 4.

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FIG. 4.

(a) Simulated and measured temperature dependence of PL intensity for uncapped QDs sample. (b) Simulated NS, NW, ND plotted versus temperature for uncapped QDs sample.

Tables

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Table I.

Critical fitting parameters of modified theoretical simulation.

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2012-09-24
2014-04-17

Abstract

Self-assembledInGaNquantum dots(QDs) were fabricated by metal-organic chemical vapor deposition. Abnormal temperature dependence of photoluminescence(PL) was observed. The integrated PL intensity of QDs sample shows a dramatic increase in a temperature range from 160 K to 215 K and reaches the maximum value at 215 K instead of 10 K as usual. To interpret this phenomenon, a theoretic model of temperature induced carrier redistribution mechanism is designed using rate equation, which fits closely with the experimental result. It is concluded that carriers’ redistribution from shallow QDs or wetting layer to deep QDs gives rise to the unique behavior for InGaNQDs structure.

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Scitation: Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4754533
10.1063/1.4754533
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