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(a) Schematic diagram for three-terminal geometry. The central electrode is made of CoFe/MgO and the outer electrodes are made of Au. (b) I–V characteristics at 293 K for a CoFe/MgO/n-Si junction with a MgO thickness (t MgO) of 2.2 nm. (b) Resistance-area products of CoFe/MgO/n-Si single junctions as a function of t MgO.
(a) Junction voltage (V) at I bias = −20 μA as functions of both in-plane and out-of-plane magnetic fields, and (b) I bias dependence of ΔV for a CoFe/MgO/n-Si junction with t MgO of 2.2 nm. ΔV is defined by the sum of the voltage change in the Hanle curve and the inverted Hanle curve. In (b), the magnitude of V is scaled by a factor of 0.008 and also plotted as a function of I bias.
t MgO dependence of ΔRS ·A at Ibias = −20 μA for CoFe/MgO/n-Si junctions. The value of R·A was also plotted for comparison.
Schematic band diagram of F/I/SC junctions under an out-of-plane magnetic field (B) of (a) B = 0 and (b) |B| ≫ 0.
(a) Calculated tunnel resistance as a function of out-of-plane magnetic field (B). The resistance was normalized by the value at B = 0. (b) Calculated ΔRS ·A and R·A values as a function of t MgO.
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