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Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry
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10.1063/1.4754545
/content/aip/journal/apl/101/13/10.1063/1.4754545
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4754545
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram for three-terminal geometry. The central electrode is made of CoFe/MgO and the outer electrodes are made of Au. (b) I–V characteristics at 293 K for a CoFe/MgO/n-Si junction with a MgO thickness (t MgO) of 2.2 nm. (b) Resistance-area products of CoFe/MgO/n-Si single junctions as a function of t MgO.

Image of FIG. 2.
FIG. 2.

(a) Junction voltage (V) at I bias = −20 μA as functions of both in-plane and out-of-plane magnetic fields, and (b) I bias dependence of ΔV for a CoFe/MgO/n-Si junction with t MgO of 2.2 nm. ΔV is defined by the sum of the voltage change in the Hanle curve and the inverted Hanle curve. In (b), the magnitude of V is scaled by a factor of 0.008 and also plotted as a function of I bias.

Image of FIG. 3.
FIG. 3.

t MgO dependence of ΔRS ·A at Ibias  = −20 μA for CoFe/MgO/n-Si junctions. The value of R·A was also plotted for comparison.

Image of FIG. 4.
FIG. 4.

Schematic band diagram of F/I/SC junctions under an out-of-plane magnetic field (B) of (a) B = 0 and (b) |B| ≫ 0.

Image of FIG. 5.
FIG. 5.

(a) Calculated tunnel resistance as a function of out-of-plane magnetic field (B). The resistance was normalized by the value at B = 0. (b) Calculated ΔRS ·A and R·A values as a function of t MgO.

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/content/aip/journal/apl/101/13/10.1063/1.4754545
2012-09-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4754545
10.1063/1.4754545
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