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Phase and morphology analyses of the oxides. (a) XRD patterns. (b)–(e) TEM images at low (b) and high (c) magnifications, and electron diffraction pattern (d) and AFM image (e) for 400 °C-annealed BiRuO.
Electrical properties and band structure analysis of the oxides. (a) RT DC resistivity as a function of annealing temperature. The inset is for sputtered BiRuO films prepared for comparison. (b) Seebeck coefficient as a function of measurement temperature. (c)–(f) Temperature dependence of conductivity (c)–(d), UPS analysis (e), and Tauc plot for the optical band gap analysis (f) of a 400 °C-annealed a-BiRuO film. The conductivity shows two-dimensional behavior (ln T dependence of σ) below 25 K (c) and three-dimensional behavior (T 1/2 dependence of σ) above 25 K (d), respectively. The inset in panel (c) shows the resistivity against temperature.
Composition of solution-processed oxide films. A sputtered a-BiRuO film is also listed for comparison.
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