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Experimental data of internal quantum efficiency (filled squares) and differential carrier lifetime (open diamonds) with a fit using the ABC rate model.
Calculated overlap integral of electron and hole wave functions in InGaN QWs of thickness as a function of the resulting effective bandgap energy (energy difference of electron and hole ground states).
Coefficient of bimolecular recombination at as a function of bandgap energy. Good agreement with theory is obtained after correcting the effective parameters for the magnitude of the QCSE.
C parameter at as a function of bandgap energy. Both absolute values and their dependence on indium content are in good agreement with the simulation results in Ref. 15.
Temperature dependence of B and C coefficients averaged over all investigated samples emitting from 428 nm to 457 nm.
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