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Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
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10.1063/1.4754688
/content/aip/journal/apl/101/13/10.1063/1.4754688
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4754688
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental data of internal quantum efficiency (filled squares) and differential carrier lifetime (open diamonds) with a fit using the ABC rate model.

Image of FIG. 2.
FIG. 2.

Calculated overlap integral of electron and hole wave functions in InGaN QWs of thickness as a function of the resulting effective bandgap energy (energy difference of electron and hole ground states).

Image of FIG. 3.
FIG. 3.

Coefficient of bimolecular recombination at as a function of bandgap energy. Good agreement with theory is obtained after correcting the effective parameters for the magnitude of the QCSE.

Image of FIG. 4.
FIG. 4.

C parameter at as a function of bandgap energy. Both absolute values and their dependence on indium content are in good agreement with the simulation results in Ref. 15.

Image of FIG. 5.
FIG. 5.

Temperature dependence of B and C coefficients averaged over all investigated samples emitting from 428 nm to 457 nm.

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/content/aip/journal/apl/101/13/10.1063/1.4754688
2012-09-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4754688
10.1063/1.4754688
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