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Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of a NNO-NO self-assembled thin film on a LAO substrate; (b) XRD line scans comparing the NNO-NO composite thin films with pure NNO and NO ones on LAO substrates.

Image of FIG. 2.
FIG. 2.

(a)-(c) Top-view SEM images of NNO-NO thin films grown at different temperatures; (d) cross-sectional SEM of NNO-NO deposited at 700 °C; (e) NNO/NO volume ratio as a function of deposition temperature; and (f) diameter of the NNO nanorods as a function of deposition temperature.

Image of FIG. 3.
FIG. 3.

(a) Topographic AFM image of NNO-NO a self-assemble thin film (scale-bar: 30 nm); (b) line profile of the height in selected area in (a); (c) PFM image of NNO-NO thin films taken from the same area, showing distinct piezoelectric responses in the NNO and NO areas; and (d) comparison of D33 in NNO and NO component regions.

Image of FIG. 4.
FIG. 4.

(a) Modified Sawer-Tower measurement circuit; (b) triangular wave signal and the corresponding response on the reference capacitor; and (c) current-voltage measurement of Au/NNO-NO/ SRO heterostructures.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates