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High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
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10.1063/1.4755775
/content/aip/journal/apl/101/13/10.1063/1.4755775
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4755775
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Top view SEM image of the GaN nanowall sample grown with a nitrogen flow rate of 4.5 sccm. (b) Distribution of the length of the nanowalls for the sample.

Image of FIG. 2.
FIG. 2.

(a) PL spectra recorded at 10 K for the nanowall sample (thick red line) and the reference sample (thin blue line). (b) Normalized PL spectra recorded at 300 K for the nanowall (thick red line) and the reference (thin blue line) sample. Normalized photoconductivity () as a function of the photon energy recorded at 300 K for the nanowall (red open stars) and the reference sample (blue open squares) is also shown. Inset compares the PL profiles for the nanowall (thick red line) and the reference (thin blue line) sample within the photon energy range of 2–2.8 eV.

Image of FIG. 3.
FIG. 3.

(a) PL spectra recorded at different temperatures for the nanowall sample. Inset compares the normalized band edge features recorded at 10 (thick black line) and 300 K (thin red line) (b) Integrated intensity I of the band-edge luminescence feature as a function of the inverse of temperature. Inset compares the variation of the band gap shift with temperature for the reference (connected filled stars) and the nanowall sample (connected open circles).

Image of FIG. 4.
FIG. 4.

Thermoelectric voltage () as a function of the difference in temperature between the cold and the hot ends () recorded at 300 K for the nanowall sample. The solid line is the linear fit to the data.

Image of FIG. 5.
FIG. 5.

Schematic view of the orientation of a nanowall with respect to the contact pad. Upper inset depicts the contact pad arrangement on top of a nanowall sample. Lower inset schematically portrays a nanowall.

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/content/aip/journal/apl/101/13/10.1063/1.4755775
2012-09-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4755775
10.1063/1.4755775
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