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(a) Schematic of Ge/Si heterostructure after deposition (left) and subsequent gluing of samples (right). (b) XTEM image of the initial Ge/Si heterostructure consisting of 5–6.5 nm pores (GeA), 2.5–4 nm spherical pores (GeB), and 3–5 nm wide columnar pores (GeC) separated by 25 nm layers of Si as-grown on (001) Ge (c-Ge). Inset selected area diffraction patterns display the amorphous nature of the as-deposited films. (c) EDS line scan intensity as a function of distance across the heterostructure normalized to the known density of the c-Ge substrate.
Cross-sectional micrographs displaying the microstructural evolution of the Ge/Si heterostructure following implantation at 300 keV to a fluence of (a) 3.0 × 1015 Ge+/cm2, (b) 1.0 × 1016 Ge+/cm2, and (c) 3.0 × 1016 Ge+/cm2.
Cross-sectional micrographs of the GeC/c-Ge interface (near-interface c-Ge) following implantation at 300 keV to a fluence of (a) 3.0 × 1015 Ge+/cm2, (b) 5 × 1015 Ge+/cm2, (c) 1.0 × 1016 Ge+/cm2, and (d) 1.0 × 1016 Ge+/cm2. Vacancy profile as simulated by SRIM is overlaid in (a).
(a) Plan-view SEM and (b) XTEM micrographs of the GeC/c-Ge interface displaying the thin surface covering evident in the deposited layers as well as in the near-interface c-Ge following implantation at 300 keV to a fluence of 1.0 × 1016 Ge+/cm2. The double white arrows indicate the approximate width of the surface covering in the c-Ge substrate.
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