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The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
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10.1063/1.4756791
/content/aip/journal/apl/101/13/10.1063/1.4756791
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4756791
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram of LED structure with various EBLs.

Image of FIG. 2.
FIG. 2.

(a) Triple axis mode ω-2θ scan of 30 nm AlInN with different Mg doping level grown on GaN, and (b) AlInN EBL thickness dependence of the device characteristics such as operating voltage and the output power. Values were measured at 20 mA DC and normalized to a reference LED without EBL.

Image of FIG. 3.
FIG. 3.

(a) EQE (%) and light output power as a function of the current density for LEDs with SL EBL (orange ▲) and AlGaN EBL (blue ●) with the inset showing the current–voltage characteristics of these two LEDs, and (b) band diagram comparison between AlGaN and AlInN/GaN SL EBL structures.

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/content/aip/journal/apl/101/13/10.1063/1.4756791
2012-09-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4756791
10.1063/1.4756791
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