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Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect
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10.1063/1.4757000
/content/aip/journal/apl/101/13/10.1063/1.4757000
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4757000
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the extended gate FET based biosensor. The titanium extended gate is connected to the gate electrode of SOI MOSFET.

Image of FIG. 2.
FIG. 2.

ID-VG characteristic of EGFET. When drain voltage over 3.7 V, very steep transient and hysteresis characteristics were appeared. Inset shows the steep transient characteristics of the single transistor latch process.

Image of FIG. 3.
FIG. 3.

(a) Sensitivity characteristics using the latch process. The linearity of latch voltage is 97.67% and it shifts 37 mV/pH. (b) Hysteresis and drift characteristics of biosensor. The latch voltage is very stable with repeatable pH change and long time exposure.

Image of FIG. 4.
FIG. 4.

Real time sensing characteristics of EGFET for the sensing specific marked target. (a) The initial state corresponds to the pH 7. After injecting pH 6, the source current increases to 50 μA. However, the EGFET still maintains an on-state when the pH value returns to 7.

Image of FIG. 5.
FIG. 5.

(a) Real time sensing characteristic using AC drain bias. The negative pulse bias is inserted (−2 V, 100 ns) in constant drain bias. (b) The real time sensing characteristics by repeatable pH change.

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/content/aip/journal/apl/101/13/10.1063/1.4757000
2012-09-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4757000
10.1063/1.4757000
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