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Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect
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10.1063/1.4757000
/content/aip/journal/apl/101/13/10.1063/1.4757000
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4757000
/content/aip/journal/apl/101/13/10.1063/1.4757000
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/content/aip/journal/apl/101/13/10.1063/1.4757000
2012-09-28
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/13/10.1063/1.4757000
10.1063/1.4757000
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