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Schematic diagram of the extended gate FET based biosensor. The titanium extended gate is connected to the gate electrode of SOI MOSFET.
ID-VG characteristic of EGFET. When drain voltage over 3.7 V, very steep transient and hysteresis characteristics were appeared. Inset shows the steep transient characteristics of the single transistor latch process.
(a) Sensitivity characteristics using the latch process. The linearity of latch voltage is 97.67% and it shifts 37 mV/pH. (b) Hysteresis and drift characteristics of biosensor. The latch voltage is very stable with repeatable pH change and long time exposure.
Real time sensing characteristics of EGFET for the sensing specific marked target. (a) The initial state corresponds to the pH 7. After injecting pH 6, the source current increases to 50 μA. However, the EGFET still maintains an on-state when the pH value returns to 7.
(a) Real time sensing characteristic using AC drain bias. The negative pulse bias is inserted (−2 V, 100 ns) in constant drain bias. (b) The real time sensing characteristics by repeatable pH change.
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