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Stoichiometric controlling of boron carbide thin films by using boron-carbon dual-targets
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10.1063/1.4754628
/content/aip/journal/apl/101/14/10.1063/1.4754628
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4754628
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The scheme of PLD equipment and BxC dual-target.

Image of FIG. 2.
FIG. 2.

Typical (a) FESEM cross-sectional image and (b) GIXRD pattern of boron carbide thin films.

Image of FIG. 3.
FIG. 3.

C1s XPS spectrums of deposited boron carbide thin films from B3C dual-target at rotating speed of (a) 3, (b) 9, and (c) 18 rpm, and (d) B/C atomic ratio of deposited boron carbide thin films from BxC (0.1 < x < 11) dual-targets compare with that of former reports.

Image of FIG. 4.
FIG. 4.

C1s XPS spectrums of deposited boron carbide thin films from BxC dual-targets: (a) x = 0.2, (b) x = 3, (c) x = 8, and (d) ratio of sp 2/sp 3 and structure of boron carbide.

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/content/aip/journal/apl/101/14/10.1063/1.4754628
2012-10-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stoichiometric controlling of boron carbide thin films by using boron-carbon dual-targets
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4754628
10.1063/1.4754628
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