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Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor
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10.1063/1.4754827
/content/aip/journal/apl/101/14/10.1063/1.4754827
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4754827
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Electron micrograph of a SSET/QD system. The crossed squares represent the ohmic contacts. (b) Reflected power spectrum of the rf-SSET. The carrier wave at 936 MHz is modulated by a 100 kHz, 0.004 e rms sine wave applied on the SSET gate.

Image of FIG. 2.
FIG. 2.

(a) Circuit diagram for the real-time measurement. The reflected signal of the rf-SSET is modulated by the QD charge states. After demodulation the QD signal can be recovered. (b) The QD stays in the N-electron state most of the time, with occasional upward transitions. (c) N and states become degenerate. (d) is the more stable state. (e) Fast detection of a RTS.

Image of FIG. 3.
FIG. 3.

(a) Circuit diagram for the time-averaged measurement. The reflected power is demodulated by a diode detector and averaged by a LP filter before sent into the data acquisition (DAQ) device. (b) and (c) Stability diagram of a nearly uncoupled DQD. The data are taken with lock-in measurement in (b) and using the rf-SSET in (c). (d) Stability diagram at approximately zero bias across the DQD, measured with the rf-SSET. (e) The same measurement, but with 0.6 mV bias across the DQD.

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/content/aip/journal/apl/101/14/10.1063/1.4754827
2012-10-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4754827
10.1063/1.4754827
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