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Atomic force microscopy topographies of the measured sample. Inset in GaAs and GaMnAs at are . Vertical scale of images is 15.5 nm for Ga droplets, for GaAs QRs: () and 7.8 nm (), for GaMnAs QRs: 7.4 nm (), 12.2 nm (), and 7.1 nm ().
Standardized height distribution for Ga droplets (left panel) and GaAs quantum rings grown at . Open symbols refer to the experimental data.
Island height scaling as a function of the radius.
Simple models schematizing the transition from a Ga droplet (the parallelepiped in panel (a)) to a GaAs QR (the square ring in panel (b)).
Experimental mean values of QDs height , radius , volume , number density , and total volume .
Scaling exponents found in the best fit of the data of Figure 3 with the law .
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