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Emission spectrum of Tm3+ doped silicon thin film at room temperature using an 808 nm laser diode. Inset shows the fluorescence decay curve.
Raman spectra from as-deposited Si:Tm3+ thin film (green) as well as fs-laser irradiated single (orange) and double (blue) pass regions, peaked at 498 cm−1, 509 cm−1, and 500 cm−1, respectively. Inset shows 8× magnification of region between 470 and 530 cm−1.
(a) 3D-AFM image of a single waveguide, measuring 15 μm across (z-axis reads 1 μm/div). (b) 1550 nm propagated mode through the waveguide.
A comparison of the spectroscopic properties of Tm3+ doped glass hosts with that for Tm3+ doped nano Si films at room temperature.
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