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Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

at different source-drain voltages, from 10 to 60 mV. In the inset, a SEM image of the device active region is shown. The two arms of the log-periodic antenna realized through e-beam lithography are, respectively, connected to source (S) and gate (G) electrodes, while the current is measured through the drain (D) one.

Image of FIG. 2.
FIG. 2.

Video signal obtained in the detection experiment (scatter points, red curve is an interpolation to the data) compared with the responsivity extracted from the transfer characteristics of Fig. 1 (blue curve). Inset: lock-in phase signal recorded during the measurement. Note the abrupt phase change obtained when the video signal changes its sign.

Image of FIG. 3.
FIG. 3.

(a) Schematic of the 1D band line-up of the InAs/InSb FET for a 10 V gate bias (Schrödinger-Poisson). The zone in which the gate is expected to have more effect is highlighted; note that it extends very far from the junction region. (b) Charge density and isopotential lines simulated, for a 2D Poisson toy-model, for an applied gate bias of 10 V. (c) The percent of charge localized in the 3 nm-outermost nanowire shell as a function of the lateral gate bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors