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GeSn p-i-n detectors integrated on Si with up to 4% Sn
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10.1063/1.4757124
/content/aip/journal/apl/101/14/10.1063/1.4757124
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757124

Figures

Image of FIG. 1.
FIG. 1.

μ-Raman spectroscopy measurements for the GeSn calibration layers. A Ge-Ge phonon peak around 300 cm−1 and two Ge-Sn phonon peaks at 260 cm−1 and 187 cm−1 are observed. The inset shows the shift of Ge-Ge peak as function of Sn content.

Image of FIG. 2.
FIG. 2.

Schematic cross section of a vertical GeSn heterojunction p-i-n diode with optical window. The buried contact and the top contact consist of special Si and Ge heterocontacts.

Image of FIG. 3.
FIG. 3.

Dark current density–voltage characteristics of a GeSn p-i-n diode with a Sn content of 4% for devices with different radii. The current scales with area up to 0.2 V. Inset: dark current density-voltage characteristic for different Sn concentrations (device radius 80 μm).

Image of FIG. 4.
FIG. 4.

Responsivity-voltage characteristics for a GeSn detector (Sn content of 2.8%) with a radius of 80 μm for different wavelengths. The responsivity is almost constant for reverse voltages.

Image of FIG. 5.
FIG. 5.

Optical responsivity from λ = 1250 nm up to λ = 2000 nm for the GeSn p-i-n detectors with different Sn concentrations at reverse bias of −0.1 V.

Tables

Generic image for table
Table I.

Comparison of the optical responsivity of GeSn photodetectors fabricated from different groups.

Generic image for table
Table II.

Comparison of the change of Ge-Ge phonon peak and the GeSn p-i-n diodes.

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/content/aip/journal/apl/101/14/10.1063/1.4757124
2012-10-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GeSn p-i-n detectors integrated on Si with up to 4% Sn
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757124
10.1063/1.4757124
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