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GeSn p-i-n detectors integrated on Si with up to 4% Sn
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Image of FIG. 1.
FIG. 1.

μ-Raman spectroscopy measurements for the GeSn calibration layers. A Ge-Ge phonon peak around 300 cm−1 and two Ge-Sn phonon peaks at 260 cm−1 and 187 cm−1 are observed. The inset shows the shift of Ge-Ge peak as function of Sn content.

Image of FIG. 2.
FIG. 2.

Schematic cross section of a vertical GeSn heterojunction p-i-n diode with optical window. The buried contact and the top contact consist of special Si and Ge heterocontacts.

Image of FIG. 3.
FIG. 3.

Dark current density–voltage characteristics of a GeSn p-i-n diode with a Sn content of 4% for devices with different radii. The current scales with area up to 0.2 V. Inset: dark current density-voltage characteristic for different Sn concentrations (device radius 80 μm).

Image of FIG. 4.
FIG. 4.

Responsivity-voltage characteristics for a GeSn detector (Sn content of 2.8%) with a radius of 80 μm for different wavelengths. The responsivity is almost constant for reverse voltages.

Image of FIG. 5.
FIG. 5.

Optical responsivity from λ = 1250 nm up to λ = 2000 nm for the GeSn p-i-n detectors with different Sn concentrations at reverse bias of −0.1 V.


Generic image for table
Table I.

Comparison of the optical responsivity of GeSn photodetectors fabricated from different groups.

Generic image for table
Table II.

Comparison of the change of Ge-Ge phonon peak and the GeSn p-i-n diodes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GeSn p-i-n detectors integrated on Si with up to 4% Sn