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Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer
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10.1063/1.4757127
/content/aip/journal/apl/101/14/10.1063/1.4757127
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757127
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the Ag-NP layer. (b) The extinction spectrum of Ag NPs coated on MgO film (black solid line) and a typical PL spectrum of ZnO film (red dashed line); its inset is a transmission spectrum of the Ag/MgO layer in the wavelength range of 300-600 nm. (c) RT PL spectra of Ag/MgO/ZnO multilayer films with different spacer-layer thicknesses; the inset shows the variation of enhancement ratio of integrated UV/visible emission intensity with the MgO spacer-layer thickness. (d) The dependence of PL enhancement ratio on emission wavelength.

Image of FIG. 2.
FIG. 2.

(a) Schematic diagram of the LSP-enhanced LED structure. (b) I-V curves of the LEDs with (blue line) and without (red line) Ag/MgO interlayer; the linear I-V characteristics in the inset verify the good ohmic contact between Ni/Au (In) and p-GaN (n-ZnO).

Image of FIG. 3.
FIG. 3.

(a) RT EL spectra of the LEDs with (blue line) and without (red line) Ag/MgO interlayer obtained at the injection current of 1 mA; the inset shows Gaussian deconvolution analysis of near-UV EL spectrum. (b) and (d) Integrated EL intensity and EL enhancement ratio of the two LEDs as a function of the injection current. (c) The dependence of EL enhancement ratio on emission wavelength, the injection current is fixed at 1 mA.

Image of FIG. 4.
FIG. 4.

(a) 20 K TR-PL spectra of ZnO films with (blue circle) and without (red square) Ag/MgO layer monitored at 380 nm, the solid lines are the fit to a biexponential decay model. (b) Arrhenius plots of the normalized integrated UV-PL intensity of ZnO films with (blue circle) and without (red square) Ag/MgO layer.

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/content/aip/journal/apl/101/14/10.1063/1.4757127
2012-10-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/14/10.1063/1.4757127
10.1063/1.4757127
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