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Contact scheme: (a) 4p measurements on sample S1. (b) Hall measurements on sample S2.
4p measurements of sample S1: (a) I-V curve at 20 °C and 30 °C, (b) specific conductivity of the proton implanted layer at −10 °C to 60 °C, calculated from the 4p measurements and the dimension of conduction layer.
Surface density of the charge carriers at the conduction band vs. temperature. The dashed lines are the curve fitting of the measured data to the conduction model.
The properties of the samples.
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